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| EFE960EV-250P ISSUED 01/03/2006 Low Distortion GaAs Power FET FEATURES * * * * * * Non-Hermetic 250mil Metal Flange Package +36.5 dBm Typical Output Power 15.0 dB Typical Power Gain at 2GHz 0.6 x 9600 Micron Recessed "Mushroom"Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides Extra High Power Efficiency and High Reliability Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BVGS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz f = 4GHz VDS = 10 V, IDS 50% IDSS Gain at 1dB Compression f = 2GHz f = 4GHz VDS = 10 V, IDS 50% IDSS Power Added Efficiency at 1dB Compression VDS = 10 V, IDS 50% IDSS f = 2GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA IGD = 9.6 mA IGS = 9.6 mA -19 -10 MIN 35.0 13.5 TYP 36.5 36.5 15.0 11.0 36 1500 2000 1000 -2.5 -22 -20 5.5* 6.0* o MAX UNITS dBm dB % 2500 -4.0 mA mS V V V C/W Thermal Resistance RTH * Overall Rth depends on case mounting. MAXIMUM RATINGS1,2 (Ta = 25C) SYMBOL VDS VGS IDS IGSF IGSR PIN PT TCH CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Reverse Gate Current Input Power Total Power Dissipation Channel Temperature ABSOLUTE 15 V -5 V Idss 43.2 mA -7.2 mA 33.5 dBm 25 W 175C CONTINUOUS 10 V -4 V 2.5 A 14.4 mA -2.4 mA @ 3dB compression 25 W 175C -65/+175C TSTG Storage Temperature -65/+175C Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1of 1 Revised January 2006 |
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